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VND7N04, VND7N04-1 VNK7N04FM
"OMNIFET": Fully autoprotected power MOSFET
Features
Type VND7N04 VND7N04-1 VNK7N04FM
s s s s s s s s
Vclamp 42 V 42 V 42 V
RDS(on) 0.14 0.14 0.14
Ilim 7A 7A 7A
Linear current limitation Thermal shut down Short circuit protection Integrated clamp Low current drawn from input pin Diagnostic feedback through input pin ESD protection Direct access to the gate of the power MOSFET (analog driving) Compatible with standard power MOSFET
Description
The VND7N04, VND7N04-1 and VNK7N04FM are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. Table 1. Device summary
Order code VND7N04, VND7N04-1-E, VND7N04-E, VND7N0413TR, VND7N04TR-E VND7N04-1 VNK7N04FM
s
Part number VND7N04 VND7N04-1 VNK7N04FM
March 2009
Rev 1
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www.st.com 17
Contents
VND7N04, VND7N04-1, VNK7N04FM
Contents
1 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 2.3 Absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 4 5
Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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VND7N04, VND7N04-1, VNK7N04FM
Block diagram
1
Block diagram
Figure 1. Block diagram
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Electrical specification
VND7N04, VND7N04-1, VNK7N04FM
2
2.1
Electrical specification
Absolute maximum rating
Table 2. Absolute maximum rating
Value Symbol Parameter DPAK IPAK
VDS Vin ID IR Vesd Ptot Tj Tc Tstg
Unit SOT-82FM V V A A V 9 W C C C
Drain-source voltage (Vin = 0) Input voltage Drain current Reverse DC output current Electrostatic discharge (C = 100 pF, R=1.5 K) Total dissipation at Tc = 25 C Operating junction temperature Case operating temperature Storage temperature
Internally clamped 18 Internally limited -7 2000 60
Internally limited Internally limited -55 to 150
2.2
Thermal data
Table 3. Thermal data
DPAK/IPAK
Rthj-case Rthj-amb
SOT82-FM 14 100 C/W C/W
Thermal resistance junction-case max Thermal resistance junction-ambient max
3.75 100
2.3
Table 4.
Electrical characteristics
Electrical characteristics: off (-40 < Tj < 125 unless otherwise specified) C
Symbol VCLAMP VCLTH VINCL IDSS IISS
Parameter Drain-source clamp voltage Drain-source clamp threshold voltage Input-source reverse clamp voltage Zero input voltage drain current (Vin = 0) Supply current from input pin
Test conditions ID = 200 mA Vin = 0 ID = 2 mA Vin = 0 Iin = -1 mA VDS = 13 V Vin = 0 VDS = 25 V Vin = 0 VDS = 0 V Vin = 10 V
Min. 32 31 -1.1
Typ. 42
Max. 52
Unit V V
-0.25 75 200 250 550
V A A A
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VND7N04, VND7N04-1, VNK7N04FM Table 5.
Symbol VIN(th)
Electrical specification
Electrical characteristics: on
Parameter Input threshold voltage Test conditions VDS = Vin ID + Iin = 1 mA Min. 0.8 Typ. Max. 3 0.14 0.28 0.28 0.56 Unit V
RDS(on)
Vin = 10 V ID = 3.5 A Vin = 5 V ID = 3.5 A -40 < Tj < 25 C Static drain-source on resistance Vin = 10 V ID = 3.5 A Vin = 5 V ID = 3.5 A Tj = 125 C
Table 6.
Symbol gfs (1) Coss
Electrical characteristics: dynamic
Parameter Forward transconductance Output capacitance Test conditions VDS = 13 V ID = 3.5 A VDS = 13 V f = 1 MHz Vin = 0 Min. 2 Typ. 5 250 500 Max. Unit S pF
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Table 7.
Symbol td(on) tr td(off) tf td(on) tr td(off) tf (di/dt)on Qi
Electrical characteristics: switching
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time Turn-on current slope Total input charge Test conditions VDD = 15 V Id = 3.5 A Vgen = 10 V Rgen = 10 (see Figure 26) VDD = 15 V Id = 3.5 A Vgen = 10 V Rgen = 1000 (see Figure 26) VDD = 15 V ID = 3.5 A Vin = 10 V Rgen = 10 VDD = 12 V ID = 3.5 A Vin = 10 V Min. Typ. 50 60 130 50 140 0.4 2.5 1 50 18 Max. 150 180 300 200 500 1.1 7 4 Unit ns ns ns ns ns s s s A/s nC
Table 8.
Symbol VSD (1) trr Qrr (2) IRRM (2)
(2)
Electrical characteristics: source drain diode
Parameter Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions ISD = 3.5 A Vin = 0 ISD = 3.5 A di/dt = 100 A/s VDD = 30 V Tj = 25 C (see test circuit, Figure 28) 40 0.2 3.6 Min. Typ. Max. 1.7 Unit V ns C A
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2. Parameters guaranteed by design/characterization
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Electrical specification Table 9.
Symbol Ilim tdlim (1) Tjsh (1) Tjrs (1) Igf (1) Eas (1)
VND7N04, VND7N04-1, VNK7N04FM
Electrical characteristics: protection
Parameter Drain current limit Step response Current limit Overtemperature shutdown Overtemperature reset Fault sink current Single pulse avalanche energy Vin = 10 V VDS = 13 V Vin = 5 V VDS = 13 V starting Tj = 25 V DD = 20 V C Vin = 10 V Rgen = 1 K L = 30 mH 0.4 Test conditions Vin = 10 V VDS = 13 V Vin = 5 V VDS = 13 V Vin = 10 V Vin = 5 V 150 135 50 20 Min. 4 4 Typ. 7 7 13 15 Max. 11 11 20 25 Unit A A s s C C mA mA J
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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VND7N04, VND7N04-1, VNK7N04FM
Protection features
3
Protection features
During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry. The device integrates:
q
Overvoltage clamp protection: internally set at 42 V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. Linear current limiter circuit: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. Overtemperature and short circuit protection: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150 C. The device is automatically restarted when the chip temperature falls below 135 C. Status feedback: in the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 . The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.
q
q
q
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).
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Protection features
VND7N04, VND7N04-1, VNK7N04FM
Figure 2.
Thermal impedance for DPAK / IPAK
Figure 3.
Derating curve
Figure 4.
Output characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance vs input voltage
Figure 7.
Static drain-source on resistance (part 1/2)
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VND7N04, VND7N04-1, VNK7N04FM
Protection features
Figure 8.
Static drain-source on resistance (part 2/2)
Figure 9.
Input charge vs input voltage
Figure 10. Capacitance variations
Figure 11. Normalized input threshold voltage vs temperature
Figure 12. Normalized on resistance vs temperature (part 1/2)
Figure 13. Normalized on resistance vs temperature (part 2/2)
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Protection features
VND7N04, VND7N04-1, VNK7N04FM
Figure 14. Turn-on current slope(part 1/2)
Figure 15. Turn-on current slope(part 2/2)
Figure 16. Turn-off drain-source voltage slope Figure 17. Turn-off drain-source voltage slope (part 1/2) (part 2/2)
Figure 18. Switching time resistive load (part 1/3)
Figure 19. Switching time resistive load (part 2/3)
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VND7N04, VND7N04-1, VNK7N04FM
Protection features
Figure 20. Switching time resistive load (part 3/3)
Figure 21. Current limit vs junction temperature
Figure 22. Step response current limit
Figure 23. Source drain diode forward characteristics
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Protection features
VND7N04, VND7N04-1, VNK7N04FM
Figure 24. Unclamped inductive load test circuits
Figure 25. Unclamped inductive waveforms
Figure 26. Switching times test circuits for resistive load
Figure 27. Input charge test circuit
Figure 28. Test circuit for inductive load Figure 29. Waveforms switching and diode recovery times
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VND7N04, VND7N04-1, VNK7N04FM
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Figure 30.
TO-252 (DPAK) mechanical data
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Package information Figure 31. TO-251 (IPAK) mechanical data
VND7N04, VND7N04-1, VNK7N04FM
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VND7N04, VND7N04-1, VNK7N04FM Figure 32. SOT-82FM mechanical data
Package information
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Revision history
VND7N04, VND7N04-1, VNK7N04FM
5
Revision history
Table 10.
Date 21-Jun-2004 18-Mar-2009
Document revision history
Revision 0.1 1 Initial release. Document reformatted. Added Table 1: Device summary on page 1. Updated Section 4: Package information on page 13 Changes
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VND7N04, VND7N04-1, VNK7N04FM
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